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CY62147GE - 4-Mbit (256K words x 16 bit) Static RAM

Download the CY62147GE datasheet PDF. This datasheet also covers the CY62147G variant, as both devices belong to the same 4-mbit (256k words x 16 bit) static ram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (CY62147G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

The CY62147GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.

Overview

CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code.

Key Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Embedded ECC for single-bit error correction[1, 2].
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY62147GE 4-Mbit (256K words x 16 bit) Static RAM
CY62147GE18 4-Mbit (256K words x 16 bit) Static RAM
CY62147GE30 4-Mbit (256K words x 16 bit) Static RAM
CY62147G 4-Mbit (256K words x 16 bit) Static RAM
CY62147G18 4-Mbit (256K words x 16 bit) Static RAM
CY62147GN 4-Mbit (256K words x 16 bit) Static RAM
CY621472E30 4-Mbit (256 K x 16) Static RAM
CY621472G 4-Mbit (256K words x 16 bit) Static RAM
CY621472G30 4-Mbit (256K words x 16 bit) Static RAM
CY621472GN 4-Mbit (256K words x 16 bit) Static RAM