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CY62167DV18 - 16M (1024K x 16) Static RAM

Description

of read and write modes.

Automatic power-down when deselected CMOS for optimum speed/power

The CY62167DV18 is a high-performance CMOS static RAM organized as 1024K words by 16 bits.

Features

  • Very high speed: 55 ns and 70 ns.
  • Voltage range: 1.65V to 1.95V.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 15 mA @ f = fMAX.
  • Ultra-low standby power.
  • Easy memory expansion with CE1, CE2 and OE features toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both B.

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Datasheet preview – CY62167DV18

Datasheet Details

Part number CY62167DV18
Manufacturer Cypress Semiconductor
File Size 371.12 KB
Description 16M (1024K x 16) Static RAM
Datasheet download datasheet CY62167DV18 Datasheet
Additional preview pages of the CY62167DV18 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com PRELIMINARY CY62167DV18 MoBL2™ 16M (1024K x 16) Static RAM Features • Very high speed: 55 ns and 70 ns • Voltage range: 1.65V to 1.95V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 15 mA @ f = fMAX • Ultra-low standby power • Easy memory expansion with CE1, CE2 and OE features toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH.
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