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EN39SL160AH/L EN39SL160AH/L 16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only FEATURES • Single power supply o

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® LY62L10248 Rev. 0.6 1024K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 0.5 Description Initial

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51 CYM1851 1,024K x 32 Static RAM Module Features • High-density 32-megabit SRAM module • 32-bit Standard Footprint supports densities from 16K x 32

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EN29LV160J EN29LV160J ******PRELIMINARY DRAFT****** www.DataSheet4U.com 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash M

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® LY62L102516 Rev. 0.3 1024K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Added SL S

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www.DataSheet4U.com EN29SL160 EN29SL160 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only FEATUR

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IS61VPD51236A IS61VPD102418A IS61LPD51236A IS61LPD102418A 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM www.Data

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EN29LV800C Purpose Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on ICs with < cFeon > from Janua

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Standard Products Data Sheet January, 2003 QCOTSTM UT8Q1024K8 SRAM FEATURES ‰ 25ns maximum (3.3 volt supply) address access time ‰ Dual cavity packa

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Standard Products Data Sheet January, 2003 QCOTSTM UT8Q1024K8 SRAM FEATURES ‰ 25ns maximum (3.3 volt supply) address access time ‰ Dual cavity packa

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E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µ

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E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µ

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www.DataSheet4U.com CY62158CV25/30/33 MoBL™ 1024K x 8 MoBL Static RAM Features • High Speed — 55 ns and 70 ns availability • Voltage range: — CY6215

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www.DataSheet4U.com PRELIMINARY CY62167DV18 MoBL2™ 16M (1024K x 16) Static RAM Features • Very high speed: 55 ns and 70 ns • Voltage range: 1.65V t

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www.DataSheet4U.com CY62167DV20 MoBL2™ 16-Mb (1024K x 16) Static RAM Features • Very high speed: 55 ns and 70 ns • Wide voltage range: 1.65V to 2.2V

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1024K/512K x18 SYNCHRONOUS DUAL QDR-IITM PRELIMINARY DATASHEET IDT70P3307 IDT70P3337 ® Features ◆ 18Mb Density (1024K x 18) – Also available 9Mb De

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www.DataSheet4U.com HIGH-SPEED 2.5V 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True

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EN29LV800B EN29LV800B 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power sup

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White Electronic Designs FEATURES  EDI8F321024C 1024Kx32 Static RAM CMOS, High Speed Module 1024Kx32 bit CMOS Static RAM  Access Times: 15, 20, an

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