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ON Semiconductor
LE25S80FD - 8M-bit (1024K x 8) Serial Flash Memory
Ordering number : EN*A2260 LE25S80FD Advance Information CMOS LSI 8M-bit (1024K 8) Serial Flash Memory http://onsemi.com Overview The LE25S80FD is.
ON Semiconductor
LE25S80QH - 8M-bit (1024K x 8) Serial Flash Memory
Ordering number : EN*A2261 LE25S80QH Advance Information CMOS LSI 8M-bit (1024K 8) Serial Flash Memory http://onsemi.com Overview The LE25S80QH is.
Maxim Integrated
DS1248P - 1024K NV SRAM
19-6078; Rev 11/11 DS1248/DS1248P 1024K NV SRAM with Phantom Clock FEATURES Real-Time Clock (RTC) Keeps Track of Hundredths of Seconds, Minutes, H.
Eon Silicon Solution
EN29LV800C - 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
EN29LV800C Purpose Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on ICs with < cFeon > from Janua.
Intel
P28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical.
Eon Silicon Solution
EN29LV800A - 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory
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ON Semiconductor
LE25S81A - 8M-bit (1024K x 8) Serial Flash Memory
LE25S81A Serial Flash Memory 8M-bit (1024K x 8) 1. Overview The LE25S81A is a SPI bus flash memory device with a 8M bit (1024K × 8-bit) configuration.
Mitsubishi
M5M231000-xxxP - 1024K-Bit ROM
MITSUBISHI LSls M5M231000-XXXP ,--, '_.• IT (131072.WORD BY 8·BIT) MASK·PROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5M231000-XXXP is 1048576-bit mas.
Aeroflex Circuit Technology
8Q1024K8 - high-performance 1M byte (8Mbit) CMOS static RAM
Standard Products Data Sheet January, 2003 QCOTSTM UT8Q1024K8 SRAM FEATURES 25ns maximum (3.3 volt supply) address access time Dual cavity packa.
Aeroflex Circuit Technology
8Q1024K8SRAM - high-performance 1M byte (8Mbit) CMOS static RAM
Standard Products Data Sheet January, 2003 QCOTSTM UT8Q1024K8 SRAM FEATURES 25ns maximum (3.3 volt supply) address access time Dual cavity packa.
Giantec Semiconductor
GT24C1024 - 2-WIRE 1024K Bits Serial EEPROM
GT24C1024 GT24C1024 2-WIRE 1024K Bits Serial EEPROM Copyright © 2012 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves .
Intel Corporation
A28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second .
ATMEL Corporation
AT27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
AT27C800 Features • • • • • Read Access Time - 100 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Opera.
Intel Corporation
M28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
M28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical.
Aeroflex Circuit Technology
UT8Q1024K8 - high-performance 1M byte (8Mbit) CMOS static RAM
Standard Products Data Sheet January, 2003 QCOTSTM UT8Q1024K8 SRAM FEATURES 25ns maximum (3.3 volt supply) address access time Dual cavity packa.
Intel
E28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase 1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µ.
ETC
SA24C1024 - 1024Kb EEPROM IIC
Features •= •= •= •= Saifun NROM™ NVM Technology Operating voltage: 2.7V to 3.6V Clock frequency: 100/400/1700/3400 kHz Low power consumption 0.5µA st.
ATMEL
27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
AT27C800 Features • • • • • Read Access Time - 100 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Opera.
Intel
MR28F010 - 1024K CMOS Flash Memory
www.DataSheet4U.com www.DataSheet4U.com .
Cypress Semiconductor
CY62167DV18 - 16M (1024K x 16) Static RAM
www.DataSheet4U.com PRELIMINARY CY62167DV18 MoBL2™ 16M (1024K x 16) Static RAM Features • Very high speed: 55 ns and 70 ns • Voltage range: 1.65V t.