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CY62167EV30 - 16-Mbit (1M x 16 / 2M x 8) Static RAM

Datasheet Summary

Description

of read and write modes.

The CY62167EV30 is a high performance CMOS static RAM organized as 1M words by 16 bits / 2M words by 8 bits.

Features

  • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V.
  • 3.60V Ultra low standby power.
  • Typical standby current: 1.5 µA www. DataSheet4U. com.
  • Maximum standby current: 12 µA.
  • Ultra low active power.
  • Typical active current: 2.2 mA @ f = 1 MHz Easy memory expansion with CE1, CE2, and OE features Automatic power down when deselec.

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Datasheet preview – CY62167EV30

Datasheet Details

Part number CY62167EV30
Manufacturer Cypress Semiconductor
File Size 557.95 KB
Description 16-Mbit (1M x 16 / 2M x 8) Static RAM
Datasheet download datasheet CY62167EV30 Datasheet
Additional preview pages of the CY62167EV30 datasheet.

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Full PDF Text Transcription

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CY62167EV30 MoBL® 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA www.DataSheet4U.com — Maximum standby current: 12 µA • Ultra low active power • • • • — Typical active current: 2.2 mA @ f = 1 MHz Easy memory expansion with CE1, CE2, and OE features Automatic power down when deselected CMOS for optimum speed/power Offered in Pb-free 48-ball BGA and 48-pin TSOP I packages significantly reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).
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