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CY7C1424KV18 - 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture

Download the CY7C1424KV18 datasheet PDF (CY7C1423KV18 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 36-mbit ddr ii sio sram two-word burst architecture.

Features

  • 36-Mbit density (2M × 18, 1M × 36).
  • 333 MHz clock for high bandwidth.
  • Two-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
  • Echo clocks (CQ and CQ) simplify data capture in high speed systems.
  • Synchronous in.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1423KV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features ■ 36-Mbit density (2M × 18, 1M × 36) ■ 333 MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Synchronous internally self timed writes ■ DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH ■ Operates similar to DDR I device with 1 cycle read latency when DOFF is asserted LOW ■ 1.
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