• Part: CY7C1648KV18
  • Description: 144-Mbit DDR II+ SRAM Two-Word Burst Architecture
  • Manufacturer: Cypress
  • Size: 597.87 KB
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Cypress
CY7C1648KV18
CY7C1648KV18 is 144-Mbit DDR II+ SRAM Two-Word Burst Architecture manufactured by Cypress.
CY7C1648KV18 CY7C1650KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features - 144-Mbit density (8 M × 18, 4 M × 36) - 450-MHz clock for high bandwidth - Two-word burst for reducing address bus frequency - Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz - Available in 2.0-clock cycle latency - Two input clocks (K and K) for precise DDR timing - SRAM uses rising edges only - Echo clocks (CQ and CQ) simplify data capture in high-speed systems - Data valid pin (QVLD) to indicate valid data on the output - Synchronous internally self-timed writes - DDR II+ operates with 2.0-cycle read latency when DOFF is asserted high - Operates similar to DDR I device with one cycle read latency when DOFF is asserted low - Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD[1] - Supports both 1.5 V and 1.8 V I/O supply - High-speed...