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CY7C1643KV18 Datasheet 144-mbit Qdr Ii+ Sram Four-word Burst Architecture

Manufacturer: Cypress (now Infineon)

Overview: CY7C1643KV18/CY7C1645KV18 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.

Key Features

  • Separate independent read and write data ports.
  • Supports concurrent transactions.
  • 450-MHz clock for high bandwidth.
  • Four-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz.
  • Available in 2.0-clock cycle latency.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Echo clocks (CQ and CQ) simplify data capture in high-speed sys.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY7C164 16K x 4 Static RAM
CY7C1645KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C1648KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture
CY7C1612KV18 144-Mbit QDR II SRAM Two-Word Burst Architecture
CY7C1613KV18 144-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C1614KV18 144-Mbit QDR II SRAM Two-Word Burst Architecture
CY7C1615KV18 144-Mbit QDR II SRAM Four-Word Burst Architecture
CY7C1618KV18 144-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1620KV18 144-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1625KV18 144-Mbit QDR II SRAM Two-Word Burst Architecture

CY7C1643KV18 Distributor