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CY7C1648KV18 - 144-Mbit DDR II+ SRAM Two-Word Burst Architecture

Datasheet Summary

Features

  • 144-Mbit density (8 M × 18, 4 M × 36).
  • 450-MHz clock for high bandwidth.
  • Two-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz.
  • Available in 2.0-clock cycle latency.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems.
  • Data valid pin (QVLD) to indicate valid data on the output.
  • Sy.

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Datasheet Details

Part number CY7C1648KV18
Manufacturer Cypress Semiconductor
File Size 597.87 KB
Description 144-Mbit DDR II+ SRAM Two-Word Burst Architecture
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CY7C1648KV18 CY7C1650KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features ■ 144-Mbit density (8 M × 18, 4 M × 36) ■ 450-MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz ■ Available in 2.0-clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ Synchronous internally self-timed writes ■ DDR II+ operates with 2.
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