CY7C2576KV18, CY7C2561KV18 - 72-Mbit QDR-II SRAM 4-Word Burst Architecture

Cypress Semiconductor

Datasheet Details

Part number	CY7C2576KV18, CY7C2561KV18
Manufacturer	Cypress Semiconductor
File Size	915.19 KB
Description	72-Mbit QDR-II SRAM 4-Word Burst Architecture
Datasheet	CY7C2561KV18_CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C2576KV18, CY7C2561KV18. Please refer to the document for exact specifications by model.

The CY7C2561KV18, CY7C2576KV18, CY7C2563KV18, and CY7C2565KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II+ architecture.

Configurations With Read Cycle Latency of 2.5 cycles: CY7C2561KV18.
8M x 8 CY7C2576KV18.
8M x 9 CY7C2563KV18.
4M x 18 CY7C2565KV18.
2M x 36 Separate independent read and write data ports.
Supports concurrent transactions 550 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz Available in 2.5 clock cycle latency Two inp.

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Published: Jan 15, 2012 |