FM28V100 Datasheet - Cypress Semiconductor

1-Mbit (128 K x 8) F-RAM Memory

* 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8

* High-endurance 100 trillion (1014) read/writes

* 151-year data retention (see the Data Retention and Endurance table)

* NoDelay™ writes

* Page mode operation to 30 ns cycle time

* Advanced

FM28V100

Cypress Semiconductor

234.38 KB

1-mbit (128 k x 8) f-ram memory.

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FM28V100 1-Mbit 128 F-RAM Memory Cypress Semiconductor

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