BTD1805J3 Key Features
- Very low collector-to-emitter saturation voltage
- Fast switching speed
- High current gain characteristic
- Large current capability
- RoHS pliant package
- Part: BTD1805J3
- Manufacturer: Cystech Electonics
- Size: 297.73 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| BTD1805D3 | NPN Epitaxial Planar Transistor |
| BTD1805FP | Low Vcesat NPN Epitaxial Planar Transistor |
| BTD1805I3 | Low Vcesat NPN Epitaxial Planar Transistor |
| BTD1816J3 | Low Vcesat NPN Epitaxial Planar Transistor |
| BTD1857A3 | NPN Epitaxial Planar Transistor |
BTD1805J3 Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.