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BTD1805J3 Datasheet Low Vcesat NPN Epitaxial Planar Transistor

Manufacturer: Cystech Electonics

Datasheet Details

Part number BTD1805J3
Manufacturer Cystech Electonics
File Size 297.73 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Download BTD1805J3 Download (PDF)

General Description

The device is manufactured in NPN planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Overview

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor BTD1805J3 BVCEO IC RCESAT Spec.

No.

Key Features

  • Very low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • High current gain characteristic.
  • Large current capability.
  • RoHS compliant package.