BTD1862I3 Key Features
- Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
- Excellent current gain characteristics
- plementary to BTB1240I3
- Part: BTD1862I3
- Manufacturer: Cystech Electonics
- Size: 146.40 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| BTD1864AI3 | NPN Epitaxial Planar Transistor |
| BTD1864I3 | NPN Epitaxial Planar Transistor |
| BTD1805D3 | NPN Epitaxial Planar Transistor |
| BTD1805FP | Low Vcesat NPN Epitaxial Planar Transistor |
| BTD1805I3 | Low Vcesat NPN Epitaxial Planar Transistor |
BTD1862I3 Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. 2003.07.02 Revised Date.