BTD1864I3 Datasheet | Cystech Electonics

Features - Low VCE(sat) - Excellent current gain characteristics - plementary to BTB1243I3 Symbol Outline TO-251 B：Base C：Collector E：Emitter B CCE B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : - 1. Single Pulse Pw=10ms Symbol VCBO VCES VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 80 80 50 6 5 7.5 1 15 150 -55~+150 Unit V V V V - 1 A W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO - VCE(sat) 1 - VCE(sat) 2 - VBE(sat) - h FE1 - h FE2 - h FE3 f T Cob ton tstg tf Min. 80 80 50 6 100 180 100 Typ. 400 15 35 300 20 Max. 1 1 135 240 1.2 820 Unit V V V V µA µA m V m V V MHz p F ns ns ns Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 2/4 Test Conditions IC=10µA, IE=0 IC=100µA, RBE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=1A, IB=50m A IC=2A, IB=100m A IC=2A, IB=100m A VCE=2V, IC=20m A VCE=2V, IC=500m A VCE=2V, IC=1A VCE=10V, IC=500m A, f=100MHz VCB=10V, f=1MHz VCC=25V, IC=10IB1=-10IB2=1A, RL=25Ω - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE2 Rank Range R 180~390 S 270~560 T 390~820 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(V) VCE=5V Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE VCESAT@IC=40IB...