BTD1862I3 - NPN Epitaxial Planar Transistor

Product Overview

Cystech Electonics

Part number	BTD1862I3
Manufacturer	Cystech Electonics
File Size	146.40 KB
Description	NPN Epitaxial Planar Transistor
Datasheet	BTD1862I3 Datasheet
Additional preview pages of the BTD1862I3 datasheet.

Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A.
Excellent current gain characteristics.
Complementary to BTB1240I3 Symbol BTD1862I3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Sin.

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Published: May 11, 2007 |