BTD1862I3 Datasheet | Cystech Electonics

Features - Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A - Excellent current gain characteristics - plementary to BTB1240I3 Symbol Outline TO-251 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits 40 30 5 2 5 (Note) 1 10 150 -55~+150 Unit V V V A A W W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - h FE f T Cob Min. 40 30 5 82 Typ. 100 50 Max. 1 1 1 560 Unit V V V µA µA V MHz p F Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 IC=3A, IB=0.1A VCE=3V, IC=0.5A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f =1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current VCE=5V 10000 VCE(SAT) Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current Saturation Voltage---(m V) Current Gain---HFE VCE=3V...