• Part: MTB020N03KN6
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 435.84 KB
Download MTB020N03KN6 Datasheet PDF
Cystech Electonics
MTB020N03KN6
MTB020N03KN6 is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Description The MTB020N03KN6 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all mercial-industrial surface mount applications. Features - Simple drive requirement - Low on-resistance - Small package outline - Pb-free lead plating package - ESD protected gate Equivalent Circuit G:Gate S:Source D:Drain Ordering Information Device Package Shipping MTB020N03KN6-0-T1-G SOT-26 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143N6 Issued Date : 2016.01.06 Revised Date : 2016.02.22 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage TC=25 °C Continuous Drain Current TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C TA=70 °C Operating Junction Temperature and Storage Temperature Range Symbol...