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MTB020N03KN6 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C143N6 Issued Date : 2016.01.06 Revised Date : 2016.02.22 Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTB020N03KN6 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=7A RDS(ON)@VGS=4.5V, ID=5A 30V 7A 8.8A 14.7 mΩ(typ) 18.

Datasheet Details

Part number MTB020N03KN6
Manufacturer Cystech Electonics
File Size 435.84 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTB020N03KN6-CystechElectonics.pdf

General Description

The MTB020N03KN6 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOT-26 package is universally preferred for all mercial-industrial surface mount applications.

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Small package outline.
  • Pb-free lead plating package.
  • ESD protected gate Equivalent Circuit MTB020N03KN6 G：Gate S：Source D：Drain Ordering Information Device Package Shipping MTB020N03KN6-0-T1-G SOT-26 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 :.

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MTB020N03KN6 Distributor