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MTB020N03KN6 Datasheet Preview

MTB020N03KN6 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
MTB020N03KN6
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=7A
RDS(ON)@VGS=4.5V, ID=5A
30V
7A
8.8A
14.7 mΩ(typ)
18.9 mΩ(typ)
Description
The MTB020N03KN6 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Small package outline
Pb-free lead plating package
ESD protected gate
Equivalent Circuit
MTB020N03KN6
GGate SSource DDrain
Ordering Information
Device
Package
Shipping
MTB020N03KN6-0-T1-G
SOT-26
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB020N03KN6
CYStek Product Specification




Cystech Electonics

MTB020N03KN6 Datasheet Preview

MTB020N03KN6 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25 °C
Continuous Drain Current
TC=70 °C
TA=25 °C (Note 1)
TA=70 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
30
±20
8.8
7.0
7
5.6
40
3.1
2
2
1.25
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
Rth,j-c
RθJA
40
62.5
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t5 sec. 156/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width 300μs, Duty Cycle2%
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
30 -
- V VGS=0V, ID=250μA
ΔBVDSS/ΔTj - 0.02 - V/Reference to 25, ID=250μA
VGS(th)
1 - 2.5 V VDS=VGS, ID=250μA
IGSS - - ±10
VGS=±16V, VDS=0V
IDSS
- - 1 μA VDS=30V, VGS=0V, Tj=25
-- 5
VDS=24V, VGS=0V, Tj=55
*RDS(ON)
-
-
14.7
18.9
19
25
mΩ
ID=7A, VGS=10V
ID=5A, VGS=4.5V
*GFS
- 6 - S VDS=5V, ID=5A
Dynamic
Ciss
Coss
Crss
- 450
- 79
- 60
-
-
-
pF VDS=15V, VGS=0V, f=1MHz
MTB020N03KN6
CYStek Product Specification


Part Number MTB020N03KN6
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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MTB020N03KN6 Datasheet PDF






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