MTB028N10RNCQ8 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET) | Download Cystech Electonics MTB028N10RNCQ8

MTB028N10RNCQ8 - N-Channel Enhancement Mode Power MOSFET

Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 6.6A 22 mΩ(typ) 26 mΩ(typ) Symbol MTB028N10RNCQ8 Outline DD SOP-8 DD G：Gate D：Drain S：Source NC : Not Connected Pin 1 G S NC S Ordering Information Device MTB028N10RNCQ8-0-T3-G Package Shipping SOP-8 (RoHS compliant & Halogen-.

Datasheet Details

Part number	MTB028N10RNCQ8
Manufacturer	Cystech Electonics
File Size	428.87 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB028N10RNCQ8 Datasheet
Additional preview pages of the MTB028N10RNCQ8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB028N10RNCQ8 Spec. No. : C053Q8 Issued Date : 2016.11.22 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 6.

Published: Feb 28, 2017 |