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Cystech Electonics

MTB028N10RNCQ8 Datasheet Preview

MTB028N10RNCQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB028N10RNCQ8
Spec. No. : C053Q8
Issued Date : 2016.11.22
Revised Date :
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=4A
RDS(ON)@VGS=4.5V, ID=3A
100V
6.6A
22 mΩ(typ)
26 mΩ(typ)
Symbol
MTB028N10RNCQ8
Outline
DD
SOP-8
DD
GGate DDrain SSource
NC : Not Connected
Pin 1
G
S NC S
Ordering Information
Device
MTB028N10RNCQ8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB028N10RNCQ8
CYStek Product Specification




Cystech Electonics

MTB028N10RNCQ8 Datasheet Preview

MTB028N10RNCQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C053Q8
Issued Date : 2016.11.22
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 °C
TA=70 °C
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
*3. 100% tested by conditions of L=0.5mH, IAS=10A, VGS=10V, VDD=25V
Limits
100
±20
6.6
5.3
30 *1
30
128 *3
1.6 *2
3.1
2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
RθJC
RθJA
20
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
100 -
1.2 -
- 12.7
--
--
--
- 22
- 26
- 27.8
-4
- 4.9
- 1370
- 91
- 17
-
2.7
-
±100
1
25
28
35
-
-
-
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =10V, ID=5A
nA VGS=±20V
μA
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
mΩ
VGS =10V, ID=4A
VGS =4.5V, ID=3A
nC VDS=80V, VGS=10V, ID=4A
pF VDS=50V, VGS=0V, f=1MHz
MTB028N10RNCQ8
CYStek Product Specification


Part Number MTB028N10RNCQ8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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