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MTB05N03HQ8 Datasheet Preview

MTB05N03HQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C738Q8
Issued Date : 2009.08.19
Revised Date : 2011.10.03
Page No. : 1/8
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB05N03HQ8 BVDSS
ID
RDSON(max)
30V
20A
5mΩ
Description
The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
UIS, Rg 100% tested
Pb-free Lead Plating and Halogen-free Package
Symbol
MTB05N03HQ8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTB05N03HQ8
CYStek Product Specification




Cystech Electonics

MTB05N03HQ8 Datasheet Preview

MTB05N03HQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C738Q8
Issued Date : 2009.08.19
Revised Date : 2011.10.03
Page No. : 2/8
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
20
13
80 *1
20
20
10 *2
3 *3
1.5
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1
-
-
-
-
20
-
-
-
-
-
-
1.5
28
-
-
-
-
3.9
7.1
2935
217
142
-
3
-
±100
1
25
-
5
9
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=20A
nA VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, TJ=125°C
A VDS =10V, VGS =10V
mΩ VGS =10V, ID=20A
mΩ VGS =4.5V, ID=15A
pF VGS=0V, VDS=15V, f=1MHz
MTB05N03HQ8
CYStek Product Specification


Part Number MTB05N03HQ8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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