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MTB080P06M3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Ultra High Speed Switching.
  • Pb-free lead plating and halogen-free package Symbol MTB080P06M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Ordering Information Device MTB080P06M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 : 1000 pcs / tape & reel,7” re.

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Datasheet Details

Part number MTB080P06M3
Manufacturer Cystech Electonics
File Size 381.86 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB080P06M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9 -60V P-Channel Enhancement Mode MOSFET MTB080P06M3 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-3A RDSON@VGS=-4.5V, ID=-3A -60V -3.2A 83mΩ(typ.) 112mΩ(typ.
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