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Cystech Electonics

MTB080P06M3 Datasheet Preview

MTB080P06M3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 1/9
-60V P-Channel Enhancement Mode MOSFET
MTB080P06M3 BVDSS
ID@VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-3A
RDSON@VGS=-4.5V, ID=-3A
-60V
-3.2A
83mΩ(typ.)
112mΩ(typ.)
Features
Single Drive Requirement
Ultra High Speed Switching
Pb-free lead plating and halogen-free package
Symbol
MTB080P06M3
Outline
SOT-89
GGate
SSource
DDrain
G DD S
Ordering Information
Device
MTB080P06M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 : 1000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06M3
CYStek Product Specification




Cystech Electonics

MTB080P06M3 Datasheet Preview

MTB080P06M3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Pulsed Drain Current
Total Power Dissipation (TA=25)
ID
IDM
PD
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board
*3. Pulse width300μs, duty cycle2%
Limits
-60
±20
-3.2
-2.6
-18 *1, 3
2 *2
0.02
-55~+150
Unit
V
A
W
W/°C
°C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
62.5*
* Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
BVDSS/Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTB080P06M3
Min.
-60
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.05
-
10
-
-
-
83
112
498
48
38
6.9
17.4
29.2
14.8
Max.
-
-
-2.5
-
±100
-1
-25
110
150
-
-
-
-
-
-
-
Unit Test Conditions
V
V/°C
V
S
nA
μA
mΩ
VGS=0V, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VDS=-5V, ID=-3A
VGS=±20V, VDS=0V
VDS=-48V, VGS=0V
VDS=-48V, VGS=0V (Tj=70°C)
ID=-3A, VGS=-10V
ID=-3A, VGS=-4.5V
pF VDS=-30V, VGS=0V, f=1MHz
ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
CYStek Product Specification


Part Number MTB080P06M3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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