• Part: MTB080P06M3
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 381.86 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9 -60V P-Channel Enhancement Mode MOSFET MTB080P06M3 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-3A RDSON@VGS=-4.5V, ID=-3A -60V -3.2A 83mΩ(typ.) 112mΩ(typ.) Features - Single Drive Requirement - Ultra High Speed Switching - Pb-free lead plating and halogen-free package Symbol Outline SOT-89 G:Gate S:Source D:Drain G DD S Ordering Information Device MTB080P06M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / tape & reel Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound...