MTB080P06N3 Description
CYStech Electronics Corp. 2016.03.24 Revised Date.
MTB080P06N3 Key Features
- Advanced trench process technology -High density cell design for ultra low on resistance -Pb-free lead plating and halog
- Part: MTB080P06N3
- Manufacturer: Cystech Electonics
- Size: 410.12 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| MTB080P06N6 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06J3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06L3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06M3 | P-Channel Enhancement Mode Power MOSFET |
| MTB080P06Q8 | P-Channel Enhancement Mode Power MOSFET |