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Cystech Electonics

MTB080P06N3 Datasheet Preview

MTB080P06N3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C069N3
Issued Date : 2016.03.24
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTB080P06N3
BVDSS
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1.7A
-60V
-2.5A
80mΩ
109mΩ
Features
Advanced trench process technology
High density cell design for ultra low on resistance
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080P06N3
Outline
SOT-23
D
GGate
SSource
DDrain
GS
Ordering Information
Device
MTB080P06N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06N3
CYStek Product Specification




Cystech Electonics

MTB080P06N3 Datasheet Preview

MTB080P06N3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V
Pulsed Drain Current
TA=25°C
TA=70°C
(Note 1&2)
Maximum Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Spec. No. : C069N3
Issued Date : 2016.03.24
Revised Date :
Page No. : 2/ 9
Limits
-60
±20
-2.5 (Note 3)
-2 (Note 3)
-10
1.25
0.8
-55~+150
Unit
V
A
W
°C
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient , max (Note 3)
Thermal Resistance, Junction-to-Case , max
RθJA
RθJC
100
50
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%
3. Surface mounted on 1 in² copper pad of FR-4 board, t5s; 120°C/W at steady state; 417°C/W when mounted on minimum
copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
-60
-1.0
-
-
-
-
-
-
-
-
-
-2.5
V
VGS=0V, ID=-250µA
VDS=VGS, ID=-250µA
-
±100
nA VGS=±20V, VDS=0V
-
-
-1
-10
µA
VDS=-48V, VGS=0V
VDS=-48V, VGS=0V, Tj=55°C
80
109
104
150
mΩ
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1.7A
5 - S VDS=-10V, ID=-2A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
- 511 -
- 57 - pF VDS=-25V, VGS=0V, f=1MHz
- 40 -
- 6.8 -
-
-
18.2 -
26.4 -
ns VDS=-30V, ID=-2A, VGS=-10V, RG=3Ω
- 7.6 -
- 12 -
- 1.7 - nC VDS=-48V, ID=-2A, VGS=-10V
- 3-
MTB080P06N3
CYStek Product Specification


Part Number MTB080P06N3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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MTB080P06N3 Datasheet PDF






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