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MTB080P06N3 - P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

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Datasheet Details

Part number: MTB080P06N3
Manufacturer: Cystech Electonics
File Size: 410.12 KB
Datasheet: MTB080P06N3-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

MTB080P06N3 Product details

Features

Advanced trench process technology.
High density cell design for ultra low on resistance.
Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pa.

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P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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