MTB080P06N3
Features
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOT-23 D
G：Gate S：Source D：Drain
Ordering Information
Device MTB080P06N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V Pulsed Drain Current
TA=25°C TA=70°C
(Note 1&2)
Maximum Power Dissipation
TA=25°C TA=70°C
Operating Junction and Storage Temperature
Symbol VDS VGS
ID IDM
Tj, Tstg
Spec. No. : C069N3 Issued Date : 2016.03.24 Revised...
