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MTB080P06N3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pa.

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Datasheet Details

Part number MTB080P06N3
Manufacturer Cystech Electonics
File Size 410.12 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB080P06N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 BVDSS ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.7A -60V -2.