MTB080P06N3 Overview
Key Features
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS
| Part | MTB080P06N3 |
|---|---|
| Description | P-Channel Enhancement Mode Power MOSFET |
| Category | MOSFET |
| Manufacturer | Cystech Electonics |
| Size | 410.12 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |