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MTB080P06Q8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package Equivalent Circuit MTB080P06Q8 Outline SOP-8 G:Gate S:Source D:Drain Ordering Information Device MTB080P06Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & re.

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Datasheet Details

Part number MTB080P06Q8
Manufacturer Cystech Electonics
File Size 410.65 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB080P06Q8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06Q8 BVDSS ID@ VGS=-10V, TA=25°C RDSON @VGS=-10V, ID=-4A RDSON @VGS=-4.5V, ID=-3A -60V -4A 80.3mΩ(typ.) 108mΩ(typ.