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Cystech Electonics

MTB080P06Q8 Datasheet Preview

MTB080P06Q8 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C069Q8
Issued Date : 2016.01.29
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06Q8 BVDSS
ID@ VGS=-10V, TA=25°C
RDSON @VGS=-10V, ID=-4A
RDSON @VGS=-4.5V, ID=-3A
-60V
-4A
80.3mΩ(typ.)
108mΩ(typ.)
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating package
Equivalent Circuit
MTB080P06Q8
Outline
SOP-8
GGate
SSource
DDrain
Ordering Information
Device
MTB080P06Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB080P06Q8
CYStek Product Specification




Cystech Electonics

MTB080P06Q8 Datasheet Preview

MTB080P06Q8 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C069Q8
Issued Date : 2016.01.29
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=6mH, ID=-4A, VDD=-15V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
-60
±20
-4
-3.2
-18 *1
-4
48
2.5 *2
3.1 *3
2 *3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
25
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s ; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Ciss
Coss
Crss
-60
-1.0
-
-
-
-2.5
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-
-
±100
nA VGS=±20V, VDS=0V
-
-
-
-
-1
-10
μA
VDS=-60V, VGS=0V
VDS=-48V, VGS=0V, Tj=85°C
-
-
80.3
108
105
145
mΩ
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
- 10 - S VDS=-10V, ID=-10A
- 503 -
- 54 - pF VDS=-25V, VGS=0V, f=1MHz
- 37 -
MTB080P06Q8
CYStek Product Specification


Part Number MTB080P06Q8
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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