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MTB110P08KN3 P-Channel Enhancement Mode MOSFET

MTB110P08KN3 Description

CYStech Electronics Corp.Spec.No.: C123N3 Issued Date : 2015.11.09 Revised Date : Page No.: 1/9 -80V P-Channel Enhancement Mode MOSFET MTB110P08.

MTB110P08KN3 Features

* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* ESD protected gate
* Pb-free lead plating package Symbol MTB110P08KN3 Outline SOT-23 D Gļ¼šGate S

MTB110P08KN3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB110P08KN3 CYStek Product Specification

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Datasheet Details

Part number
MTB110P08KN3
Manufacturer
Cystech Electonics
File Size
416.13 KB
Datasheet
MTB110P08KN3-CystechElectonics.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET Cystech Electonics
Cystech Electonics MTB110P08KN3-like datasheet