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MTB110P08KN3 - P-Channel Enhancement Mode MOSFET

Features

  • Low gate charge.
  • Compact and low profile SOT-23 package.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • ESD protected gate.
  • Pb-free lead plating package Symbol MTB110P08KN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB110P08KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S f.

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Datasheet Details

Part number MTB110P08KN3
Manufacturer Cystech Electonics
File Size 416.13 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB110P08KN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/9 -80V P-Channel Enhancement Mode MOSFET MTB110P08KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1A -80V -2.
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