MTB110P08KN3 Datasheet | Cystech Electonics

CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/9 -80V P-Channel Enhancement Mode MOSFET MTB110P08KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1A -80V -2.2A 104mΩ(typ) 141mΩ(typ) Features - Low gate charge - pact and low profile SOT-23 package - Advanced trench process technology - High density cell design for ultra low on resistance - ESD protected gate - Pb-free lead plating package Symbol Outline SOT-23 D G：Gate S：Source D：Drain Ordering Information Device MTB110P08KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape &...