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Cystech Electonics

MTB110P08KN3 Datasheet Preview

MTB110P08KN3 Datasheet

P-Channel Enhancement Mode MOSFET

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CYStech Electronics Corp.
Spec. No. : C123N3
Issued Date : 2015.11.09
Revised Date :
Page No. : 1/9
-80V P-Channel Enhancement Mode MOSFET
MTB110P08KN3 BVDSS
ID @ VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V,ID=-1A
-80V
-2.2A
104mΩ(typ)
141mΩ(typ)
Features
Low gate charge
Compact and low profile SOT-23 package
Advanced trench process technology
High density cell design for ultra low on resistance
ESD protected gate
Pb-free lead plating package
Symbol
MTB110P08KN3
Outline
SOT-23
D
GGate
SSource
DDrain
GS
Ordering Information
Device
MTB110P08KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB110P08KN3
CYStek Product Specification




Cystech Electonics

MTB110P08KN3 Datasheet Preview

MTB110P08KN3 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C123N3
Issued Date : 2015.11.09
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C , VGS=-10V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=-10V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation (Note 3)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj ; Tstg
Limits
-80
±20
-2.2
-1.8
-20
1.38
0.01
-55~+150
Unit
V
A
W
W/°C
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Symbol
Rth,ja
Limit
90
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
-80 -
- V VGS=0V, ID=-250μA
- 0.08 - V/°C Reference to 25°C, ID=-250μA
-1.0 - -2.5 V VDS=VGS, ID=-250μA
- - ±10
VGS=±20V, VDS=0V
- - -1 μA VDS=-80V, VGS=0V
- - -10
VDS=-64V, VGS=0V (Tj=70°C)
-
-
104
141
135
185
mΩ
ID=-2A, VGS=-10V
ID=-1A, VGS=-4.5V
- 5.2 -
S VDS=-10V, ID=-2A
- 537 -
- 52 -
- 37 -
- 7.4 -
- 17.4 -
- 36 -
- 24.8 -
pF VDS=-30V, VGS=0V, f=1MHz
ns
VDS=-40V, ID=-1A, VGS=-10V
RG=10Ω
MTB110P08KN3
CYStek Product Specification


Part Number MTB110P08KN3
Description P-Channel Enhancement Mode MOSFET
Maker Cystech Electonics
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MTB110P08KN3 Datasheet PDF






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