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MTB115P10KJ3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Protected Gate.
  • Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.5V, ID=-8A -100V -15A 82mΩ(typ) 107mΩ(typ) Equivalent Circuit MTB115P10KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB115P10KJ3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environmen.

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Datasheet Details

Part number MTB115P10KJ3
Manufacturer Cystech Electonics
File Size 346.04 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB115P10KJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Spec. No. : C891J3 CYStech Electronics Corp. Issued Date : 2016.12.23 Revised Date : P-Channel Enhancement Mode Power MOSFET MTB115P10KJ3 Features • Low Gate Charge • Simple Drive Requirement • ESD Protected Gate • Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.