Datasheet4U Logo Datasheet4U.com

MTB115P10KJ3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Protected Gate.
  • Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.5V, ID=-8A -100V -15A 82mΩ(typ) 107mΩ(typ) Equivalent Circuit MTB115P10KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB115P10KJ3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environmen.

📥 Download Datasheet

Datasheet preview – MTB115P10KJ3

Datasheet Details

Part number MTB115P10KJ3
Manufacturer Cystech Electonics
File Size 346.04 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB115P10KJ3 Datasheet
Additional preview pages of the MTB115P10KJ3 datasheet.

📁 Similar Datasheet

  • MTB11N03BQ8 - N-Channel Logic Level Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB11N03BV8 - N-Channel Logic Level Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB10000 - LED Lamp Arrays (Marktech Corporate)
  • MTB10010U - NPN microwave power transistor (NXP)
  • MTB10062 - Bi-Color LED Lamp Array (Marktech Corporate)
  • MTB100A06KRH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB10N40E - TMOS POWER FET (Motorola)
  • MTB1306 - TMOS POWER FET (Motorola)
  • MTB1306 - Power MOSFET (ON Semiconductor)
  • MTB15N06E - TMOS POWER FET (Motorola)
Other Datasheets by Cystech Electonics

Full PDF Text Transcription

Click to expand full text
Spec. No. : C891J3 CYStech Electronics Corp. Issued Date : 2016.12.23 Revised Date : P-Channel Enhancement Mode Power MOSFET MTB115P10KJ3 Features • Low Gate Charge • Simple Drive Requirement • ESD Protected Gate • Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.
Published: |