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Cystech Electonics

MTB115P10KJ3 Datasheet Preview

MTB115P10KJ3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23
Revised Date :
P-Channel Enhancement Mode Power MOSFET
MTB115P10KJ3
Features
Low Gate Charge
Simple Drive Requirement
ESD Protected Gate
Pb-free Lead Plating & Halogen-free Package
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-4.5V, ID=-8A
-100V
-15A
82mΩ(typ)
107mΩ(typ)
Equivalent Circuit
MTB115P10KJ3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB115P10KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB115P10KJ3
CYStek Product Specification




Cystech Electonics

MTB115P10KJ3 Datasheet Preview

MTB115P10KJ3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23
Revised Date :
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=175°C, TC=25°C, VGS=-10V (Note 1)
Continuous Drain Current @ TJ=175°C,TC=100°C, VGS=-10V (Note 1)
Continuous Drain Current @TA=25°C, VGS=-10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=-10V
(Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current @L=0.1mH
(Note 3)
Avalanche Energy @ L=2mH, ID=-16A, RG=25Ω
(Note 4)
TC=25°C
Total Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
-100
±20
-15
-10.6
-3.5
-2.8
-60
-47
256
50
25
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t10s (Note 2)
Thermal Resistance, Junction-to-ambient, steady state
Symbol
RθJC
RθJA
Typical
2.7
15
40
Maximum
3
18
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty
cycles to keep initial TJ=25°C.
4. 100% tested by conditions of L=0.1mH, VGS=-10V, IAS=-10A, VDD=-50V
MTB115P10KJ3
CYStek Product Specification


Part Number MTB115P10KJ3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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