MTB115P10KJ3 - P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Low Gate Charge.
Simple Drive Requirement.
ESD Protected Gate.
Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.5V, ID=-8A -100V -15A 82mΩ(typ) 107mΩ(typ) Equivalent Circuit MTB115P10KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB115P10KJ3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environmen.

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Cystech Electonics MTB115P10KJ3-like datasheet

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