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MTB17N03Q8 Datasheet Preview

MTB17N03Q8 Datasheet

N-Channel Logic Level Enhancement Mode MOSFET

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CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.09.09
Revised Date : 2011.10.03
Page No. : 1/8
N-Channel Logic Level Enhancement Mode MOSFET
MTB17N03Q8
BVDSS
RDSON(MAX)
ID
30V
15mΩ
10A
Description
The MTB17N03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=15m(max.)@VGS=10V, ID=10A
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free & Halogen-free package
Equivalent Circuit
MTB17N03Q8
Outline
SOP-8
Pin 1
GGate
SSource
DDrain
MTB17N03Q8
CYStek Product Specification




Cystech Electonics

MTB17N03Q8 Datasheet Preview

MTB17N03Q8 Datasheet

N-Channel Logic Level Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.09.09
Revised Date : 2011.10.03
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, TC=25 °C
Continuous Drain Current, TC=100 °C
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
(Note 2)
Power Dissipation
TA=25°C (Note 3)
TA=100°C
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
30
±20
10
8
40
12
5
2.5
3
1.5
Operating Junction and Storage Temperature Range
Tj ; Tstg -55~+175
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=10A, Rated VDS=30V N-CH
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
*RDS(ON) *1
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
30
1
-
-
-
-
10
-
-
-
-
-
-
-
-
-
- - V VGS=0, ID=250μA
1.5 3 V VDS = VGS, ID=250μA
18 - S VDS =5V, ID=10A
-
±100
nA VGS=±20
-
-
1
25
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
- - A VDS =10V, VGS =10V
13
20
15
25
mΩ
VGS =10V, ID=10A
VGS =4.5V, ID=6A
11 -
6
1.2
- nC ID=10A, VDS=15V, VGS=10V
3.3 -
11 -
16
36
-
-
ns
VDS=15V, ID=1A,VGS=10V,
RG=6Ω, RD=15Ω
20 -
MTB17N03Q8
CYStek Product Specification


Part Number MTB17N03Q8
Description N-Channel Logic Level Enhancement Mode MOSFET
Maker Cystech Electonics
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