• Part: MTB24B03Q8
  • Description: Dual P-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 303.98 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 1/9 Dual P-Channel Logic Level Enhancement Mode Power MOSFET MTB24B03Q8 BVDSS ID @VGS=-10V, TC=25 °C RDSON(MAX)@VGS=-10V, ID=-8A Features - RDS(ON)=24mΩ(max.)@VGS=-10V, ID=-8A - Simple drive requirement - Low on-resistance - Fast switching speed - Dual P-ch MOSFET package - Pb-free lead plating & Halogen-free package RDSON(MAX)@VGS=-4.5V, ID=-6A -30V -8A 18mΩ(typ.) 27mΩ(typ.) Equivalent Circuit Outline SOP-8 D2 D2 D1 D1 G:Gate D:Drain S:Source Pin 1 G2 S2 G1 S1 Ordering Information Device MTB24B03Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating and...