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Cystech Electonics

MTB24B03Q8 Datasheet Preview

MTB24B03Q8 Datasheet

Dual P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2017.06.20
Page No. : 1/9
Dual P-Channel Logic Level Enhancement Mode Power MOSFET
MTB24B03Q8 BVDSS
ID @VGS=-10V, TC=25 °C
RDSON(MAX)@VGS=-10V, ID=-8A
Features
RDS(ON)=24m(max.)@VGS=-10V, ID=-8A
Simple drive requirement
Low on-resistance
Fast switching speed
Dual P-ch MOSFET package
Pb-free lead plating & Halogen-free package
RDSON(MAX)@VGS=-4.5V, ID=-6A
-30V
-8A
18mΩ(typ.)
27mΩ(typ.)
Equivalent Circuit
MTB24B03Q8
Outline
SOP-8
D2
D2
D1
D1
GGate DDrain SSource
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB24B03Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating and halogen-free package)
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB24B03Q8
CYStek Product Specification




Cystech Electonics

MTB24B03Q8 Datasheet Preview

MTB24B03Q8 Datasheet

Dual P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2017.06.20
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS=-10V, TC=25 °C
Continuous Drain Current, VGS=-10V, TC=100 °C
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=1mH, ID=-8A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Power Dissipation
TA=25°C (Note 3)
TA=100°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj ; Tstg
100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-8A, Rated VDS=-30V P-CH
Limits
-30
±25
-8
-6
-32
-12
32
8
2.4
1.3
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
25
62.5 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
ID(ON) *1
*RDS(ON) *1
GFS *1
Dynamic
Qg(VGS=-10V) *1, 2
Qg(VGS=-5V) *1, 2
Qgs *1, 2
Qgd *1, 2
-30
-1
-
-
-
-8
-
-
-
-
-
-
-
-
-1.5
-
-2.5
V
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
-
±100
nA VGS=±25V
-
-
-1
-10
μA
VDS =-24V, VGS =0V
VDS =-20V, VGS =0V, Tj=125°C
- - A VDS =-5V, VGS =-10V
18
27
24
30
mΩ
VGS =-10V, ID=-8A
VGS =-4.5V, ID=-6A
13 - S VDS =-5V, ID=-8A
24 -
16.1
6.8
-
-
nC ID=-8A, VDS=-15V, VGS=-10V
8-
MTB24B03Q8
CYStek Product Specification


Part Number MTB24B03Q8
Description Dual P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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