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Cystech Electonics

MTB5D0C03J4 Datasheet Preview

MTB5D0C03J4 Datasheet

N- and P-channel enhancement mode power MOSFET

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CYStech Electronics Corp.
Spec. No. : C704J4
Issued Date : 2016.06.02
Revised Date : 2016.06.03
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTB5D0C03J4
Features
Low Gate Charge
Simple Drive Requirement
RoHS compliant & Halogen-free package
BVDSS
ID @ VGS=10V(-10V), TA=25°C
ID @ VGS=10V(-10V), TC=25°C
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
30V
8.6A
33.5A
6.7 mΩ
8.3 mΩ
P-CH
-30V
-6.8A
-26.5A
13.4 mΩ
20.1 mΩ
Equivalent Circuit
MTB5D0C03J4
Outline
TO-252-4L
Tab D1/D2
GGate DDrain
SSource
G2
S2
G1
S1
Absolute Maximum Ratings (TA=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TC=100C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TA=25C, VGS=10V(-10V) (Note4)
Continuous Drain Current @ TA=70C, VGS=10V(-10V) (Note4)
Pulsed Drain Current *1
(Note3)
Single Pulse Avalanche Current @ L=0.1mH
Single Pulse Avalanche Energy @L=1mH
(Note5)
Total Power Dissipation (TC=25)
(Note1)
Total Power Dissipation (TC=100)
(Note1)
Total Power Dissipation (TA=25)
(Note2)
Total Power Dissipation (TA=70)
(Note2)
Operating Junction and Storage Temperature Range
Symbol
Limits
N-channel P-channel
VDS 30
VGS ±20
-30
±20
33.5 -26.5
21.2 -16.8
ID 8.6 -6.8
6.9 -5.4
IDM 134 -106
IAS 33.5 -26.5
EAS 128
128
25
PD
10
PDSM
2.4
1.7
Tj, Tstg -55~+150
Unit
V
A
mJ
W
C
MTB5D0C03J4
CYStek Product Specification




Cystech Electonics

MTB5D0C03J4 Datasheet Preview

MTB5D0C03J4 Datasheet

N- and P-channel enhancement mode power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C704J4
Issued Date : 2016.06.02
Revised Date : 2016.06.03
Page No. : 2/13
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6
Thermal Resistance, Junction-to-ambient, max (Note2)
Thermal Resistance, Junction-to-ambient, max (Note4)
Rth,j-a
62.5 C/W
90
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the users specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
5. L=1mH, IAS=±16A, VGS=±10V, VDD=±15V. 100% tested by L=0.1mH, IAS=±10A, VGS=±10V, VDD=±15V.
N-CH Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Static
BVDSS
30 -
BVDSS/Tj - 0.02
-V
- V/C
VGS(th)
1.0 - 2.5 V
IGSS
-
-
±100
nA
IDSS
- - 1 μA
- - 10
RDS(ON) *1
-
-
6.7
8.3
9.7
12
mΩ
GFS *1 - 14.9 -
S
Dynamic
Qg *1
- 34.3 -
Qgs *1
- 4.4 - nC
Qgd *1
- 8.8 -
td(ON) *1
-7-
tr *1
td(OFF) *1
-
-
13.4
53
-
-
ns
tf *1
- 11.6 -
Ciss - 1385 -
Coss
- 216 - pF
Crss - 143 -
Source-Drain Diode
IS *1
ISM *2
-
-
-
-
33.5
134
A
VSD *1
trr *
-
0.82 1.2
V
- 13.9 - ns
Qrr *
- 6.4 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Pulse width limited by maximum junction temperature.
Test Conditions
VGS=0V, ID=250μA
Reference to 25C, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=30V, VGS=0V
VDS=24V, VGS=0V, Tj=55C
VGS=10V, ID=10A
VGS=4.5V, ID=7A
VDS=10V, ID=7A
VDS=24V, ID=8A, VGS=10V
VDS=15V, ID=1A, VGS=10V, RG=2.7Ω
VDS=25V, VGS=0V, f=1MHz
IS=10A, VGS=0V
IF=8A, dIF/dt=100A/μs
MTB5D0C03J4
CYStek Product Specification


Part Number MTB5D0C03J4
Description N- and P-channel enhancement mode power MOSFET
Maker Cystech Electonics
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