Datasheet Details
| Part number | MTB50N10E3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 337.69 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTB50N10E3 Datasheet
|
|
|
Key Features
- Low Gate Charge.
- Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A.
- Repetitive Avalanche Rated.
- Fast Switching Characteristic.
- Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ) Symbol MTB50N10E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTB50N10E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4.