Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C893E3 Issued Date : 2016.06.01 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
BVDSS
Features
- Low Gate Charge
- Simple Drive Requirement
ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- Pb-free lead plating and RoHS pliant package
100V 29A
32mΩ (typ) 33mΩ (typ)
Symbol
Outline
TO-220
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB50N10E3-0-UB-X
Package
Shipping
TO-220 (Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS pliant...