MTB50N10E3 Description
CYStech Electronics Corp. 2016.06.01 Revised Date : 1/8 N-Channel Enhancement Mode Power MOSFET MTB50N10E3 BVDSS.
MTB50N10E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- Pb-free lead plating and RoHS pliant package