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MTB5D0C03J4 - N- and P-channel enhancement mode power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • RoHS compliant & Halogen-free package BVDSS ID @ VGS=10V(-10V), TA=25°C ID @ VGS=10V(-10V), TC=25°C RDSON(typ. ) @VGS=(-)10V RDSON(typ. ) @VGS=(-)4.5V N-CH 30V 8.6A 33.5A 6.7 mΩ 8.3 mΩ P-CH -30V -6.8A -26.5A 13.4 mΩ 20.1 mΩ Equivalent Circuit MTB5D0C03J4 Outline TO-252-4L Tab D1/D2 G：Gate D：Drain S：Source G2 S2 G1 S1 Absolute Maximum Ratings (TA=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Co.

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Datasheet Details

Part number MTB5D0C03J4
Manufacturer Cystech Electonics
File Size 671.20 KB
Description N- and P-channel enhancement mode power MOSFET
Datasheet download datasheet MTB5D0C03J4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C704J4 Issued Date : 2016.06.02 Revised Date : 2016.06.03 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTB5D0C03J4 Features  Low Gate Charge  Simple Drive Requirement  RoHS compliant & Halogen-free package BVDSS ID @ VGS=10V(-10V), TA=25°C ID @ VGS=10V(-10V), TC=25°C RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)4.5V N-CH 30V 8.6A 33.5A 6.7 mΩ 8.3 mΩ P-CH -30V -6.8A -26.5A 13.4 mΩ 20.