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MTB5D0P03Q8 - P-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free and halogen-free package RDSON@VGS=-10V, ID=-20A RDSON@VGS=-4.5V, ID=-17A -30V -20A -16A -28A -22A 3.0mΩ(typ) 4.2mΩ(typ) Equivalent Circuit MTB5D0P03Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTB5D0P03Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS complia.

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Datasheet Details

Part number MTB5D0P03Q8
Manufacturer Cystech Electonics
File Size 346.53 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB5D0P03Q8 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C965Q8 Issued Date : 2014.12.03 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03Q8 BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-4.5V, TA=25°C ID@VGS=-10V, TC=25°C ID@VGS=-4.5V, TC=25°C Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and halogen-free package RDSON@VGS=-10V, ID=-20A RDSON@VGS=-4.5V, ID=-17A -30V -20A -16A -28A -22A 3.0mΩ(typ) 4.
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