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Cystech Electonics

MTB5D0P03Q8 Datasheet Preview

MTB5D0P03Q8 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03Q8 BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-4.5V, TA=25°C
ID@VGS=-10V, TC=25°C
ID@VGS=-4.5V, TC=25°C
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free and halogen-free package
RDSON@VGS=-10V, ID=-20A
RDSON@VGS=-4.5V, ID=-17A
-30V
-20A
-16A
-28A
-22A
3.0mΩ(typ)
4.2mΩ(typ)
Equivalent Circuit
MTB5D0P03Q8
Outline
SOP-8
GGate
SSource
DDrain
Ordering Information
Device
MTB5D0P03Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03Q8
CYStek Product Specification




Cystech Electonics

MTB5D0P03Q8 Datasheet Preview

MTB5D0P03Q8 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C , VGS=-10V
Continuous Drain Current @TA=70 °C , VGS=-10V
Continuous Drain Current @TA=25 °C , VGS=-4.5V
Continuous Drain Current @TA=70 °C , VGS=-4.5V
Continuous Drain Current @TC=25 °C , VGS=-10V
Continuous Drain Current @TC=100 °C , VGS=-10V
Continuous Drain Current @TC=25 °C , VGS=-4.5V
Continuous Drain Current @TC=100 °C , VGS=-4.5V
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-50A, VDD=-25V
Power Dissipation
TC=25 °C
TC=100 °C
Power Dissipation (Note 2)
TA=25 °C
TA=70 °C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
IDSM
ID
IDM
IAS
EAS
PD
PDSM
Tj ; Tstg
Limits
-30
±25
-20
-16
-16
-12.8
-28
-17.7
-22
-13.9
-120
-50
125
6.3
2.5
3.1
2
-55~+150
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, t10s.
Unit
V
A
mJ
W
°C
Thermal Resistance Ratings
Thermal Resistance
Symbol
Maximum
Unit
Junction-to-Case
RθJC 20 °C / W
Junction-to-Ambient (Note)
RθJA
40
Note : When mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum copper pad. The value in any
given application depends on the user’s specific board design.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
IGSS
IDSS
IDSS
RDS(ON) (Note 1)
-30
-
-1
-
-
-
-
-
- - V VGS=0V, ID=-250μA
-12 - mV/°C ID=-250μA, referenced to 25°C
- -2.5 V VDS=VGS, ID=-250μA
- ±100 nA VGS=±25V, VDS=0V
-
-
-1
-10
μA
VDS=-30V, VGS=0V
VDS=-24V, VGS=0, Tj=125°C
3
4.2
4.5
6.5
mΩ
ID=-20A, VGS=-10V
ID=-17A, VGS=-4.5V
MTB5D0P03Q8
CYStek Product Specification


Part Number MTB5D0P03Q8
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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