MTD170P06KN3 Key Features
- Low gate charge
- pact and low profile SOT-23 package
- Advanced trench process technology
- High density cell design for ultra low on resistance
- ESD protected gate
- Pb-free lead plating package
- Part: MTD170P06KN3
- Manufacturer: Cystech Electonics
- Size: 416.22 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| MTD010P03V8 | P-Channel Enhancement Mode Power MOSFET |
| MTD011N10RH8 | N-Channel Enhancement Mode Power MOSFET |
| MTD011N10RJ3 | N-Channel Enhancement Mode Power MOSFET |
| MTD011N10RQ8 | N-Channel Enhancement Mode Power MOSFET |
| MTD015P10E3 | P-Channel Enhancement Mode Power MOSFET |
MTD170P06KN3 Description
CYStech Electronics Corp. 2015.11.11 Revised Date.