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MTD9D0N06H8 - N-Channel Enhancement Mode MOSFET

Key Features

  • RDSON(TYP) VGS=10V, ID=25A VGS=4.5V, ID=25A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package 60V 56A 13.8A 5.1mΩ 7.4mΩ Symbol MTD9D0N06H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD9D0N06H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment fr.

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Datasheet Details

Part number MTD9D0N06H8
Manufacturer Cystech Electonics
File Size 438.54 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTD9D0N06H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C912H8 Issued Date : 2015.11.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTD9D0N06H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDSON(TYP) VGS=10V, ID=25A VGS=4.5V, ID=25A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package 60V 56A 13.8A 5.1mΩ 7.