Full PDF Text Transcription for MTE030N15RE3 (Reference)
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MTE030N15RE3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE030N15RE3 BVDSS ID@VGS=10V,...
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N-Channel Enhancement Mode Power MOSFET MTE030N15RE3 BVDSS ID@VGS=10V, TC=25°C Features • Low Gate Charge ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package 150V 36A 4.6A 33.
MTE030N15RE3 Datasheet
