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Cystech Electonics

MTE030N15RE3 Datasheet Preview

MTE030N15RE3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C838E3
Issued Date : 2016.06.23
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE030N15RE3
BVDSS
ID@VGS=10V, TC=25°C
Features
Low Gate Charge
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=30A
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
Pb-free lead plating and RoHS compliant package
150V
36A
4.6A
33.3mΩ (typ)
Symbol
MTE030N15RE3
Outline
TO-220
GGate
DDrain
SSource
GDS
Ordering Information
Device
Package
Shipping
MTE030N15RE3-0-UB-X
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE030N15RE3
CYStek Product Specification




Cystech Electonics

MTE030N15RE3 Datasheet Preview

MTE030N15RE3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C838E3
Issued Date : 2016.06.23
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
(Note 1)
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Avalanche Current @L=0.1mH
Avalanche Energy @ L=5mH, ID=15A, VDD=50V (Note 2)
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation (TC=25)
Total Power Dissipation (TC=100)
Total Power Dissipation (TA=25)
Total Power Dissipation (TA=100)
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
IDSM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
150
±30
36
25.5
144
4.6
3.7
36
560
13
136
68
2.4
1.2
-55~+175
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=50V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
1.1
62.5
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
150
-
2.0
-
-
-
-
-
- - V VGS=0V, ID=250μA
0.1 - V/°C Reference to 25°C, ID=250μA
- 4.0 V VDS = VGS, ID=250μA
16 -
S VDS =10V, ID=20A
-
±100
nA VGS=±30V
-
-
1
25
μA
VDS =120V, VGS =0V
VDS =100V, VGS =0V, Tj=125°C
33.3 42 mΩ VGS =10V, ID=30A
Dynamic
*Qg
*Qgs
*Qgd
- 34.8 52
- 11.3 -
nC ID=20A, VDS=75V, VGS=10V
- 9.6 -
MTE030N15RE3
CYStek Product Specification


Part Number MTE030N15RE3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 8 Pages
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