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Cystech Electonics

MTE030N15RQ8 Datasheet Preview

MTE030N15RQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE030N15RQ8
Spec. No. : C838Q8
Issued Date : 2016.06.29
Revised Date :
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=6A
150V
5.6A
29.5 mΩ(typ)
Symbol
MTE030N15RQ8
Outline
DD
SOP-8
DD
GGate
DDrain
SSource
Pin 1
G
SSS
Ordering Information
Device
MTE030N15RQ8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE030N15RQ8
CYStek Product Specification




Cystech Electonics

MTE030N15RQ8 Datasheet Preview

MTE030N15RQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C838Q8
Issued Date : 2016.06.29
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=10mH, ID=6A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 °C
TA=70 °C
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
*3. 100% tested by conditions of L=0.1mH, IAS=6A, VGS=10V, VDD=25V
Limits
150
±30
5.6
4.5
24 *1
40
180 *3
1.6 *2
3.1
2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
RθJC
RθJC
20
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
150 -
2-
- 10.4
--
--
--
- 29.5
- 34.3
- 8.6
- 9.1
- 1792
- 106
-8
-
4
-
±100
1
25
38
-
-
-
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =10V, ID=5A
nA VGS=±30V
μA
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125°C
mΩ VGS =10V, ID=6A
nC VDS=75V, VGS=10V, ID=6A
pF VDS=75V, VGS=0V, f=1MHz
MTE030N15RQ8
CYStek Product Specification


Part Number MTE030N15RQ8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
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