* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package -100V -44A -4.6A 40mΩ Symbol MTE050P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE050P10E
MTE050P10E3 Datasheet (314.79 KB)
MTE050P10E3
Cystech Electonics
314.79 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C975E3 Issued Date : 2016.05.26 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTE050P.
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