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MTE050P10E3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package -100V -44A -4.6A 40mΩ Symbol MTE050P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE050P10E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gr.

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Datasheet Details

Part number MTE050P10E3
Manufacturer Cystech Electonics
File Size 314.79 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE050P10E3 Datasheet

Full PDF Text Transcription for MTE050P10E3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTE050P10E3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C975E3 Issued Date : 2016.05.26 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTE050P10E3 BVDSS ID @ VGS=-10...

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P-Channel Enhancement Mode Power MOSFET MTE050P10E3 BVDSS ID @ VGS=-10V, TC=25°C ID @ VGS=-10V, TA=25°C RDSON(TYP) @ VGS=-10V, ID=-20A Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package -100V -44A -4.

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