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Cystech Electonics

MTE05N08E3 Datasheet Preview

MTE05N08E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C918E3
Issued Date : 2013.06.10
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE05N08E3 BVDSS
ID
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
80V
180A
4.3mΩ
4.5mΩ
Features
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
MTE05N08E3
Outline
TO-220
GGate
DDrain
SSource
Ordering Information
Device
MTE05N08E3-0-UB-S
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTE05N08E3
CYStek Product Specification




Cystech Electonics

MTE05N08E3 Datasheet Preview

MTE05N08E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C918E3
Issued Date : 2013.06.10
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
(Note 1)
(Note 3)
Continuous Drain Current @ TA=25°C
(Note 2)
Continuous Drain Current @ TA=70°C
(Note 2)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.1mH, ID=90A, RG=25Ω (Note 2)
Repetitive Avalanche Energy@ L=0.1mH
(Note 3)
Power Dissipation
TC=25°C
TC=100°C
(Note 1)
(Note 1)
Power Dissipation
TA=25°C
TA=70°C
(Note 2)
(Note 2)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
IDSM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
80
±25
180
127
500
14
11
30
405
33
333
167
2
1.3
-55~+175
Unit
V
A
mJ
W
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t10s (Note 1)
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Symbol
Rth,j-c
Rth,j-a
Value
0.45
15
62.5
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The maximum current limited by package is 120A.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTE05N08E3
CYStek Product Specification


Part Number MTE05N08E3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 8 Pages
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