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MTE05N10E3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTE05N10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE05N10E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packi.

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Datasheet Details

Part number MTE05N10E3
Manufacturer Cystech Electonics
File Size 230.14 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE05N10E3 Datasheet

Full PDF Text Transcription for MTE05N10E3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTE05N10E3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C928E3 Issued Date : 2013.11.04 Revised Date : 2013.11.12 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE05N10E3 BVDSS ID...

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No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE05N10E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 140A 5.9mΩ 6.

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