* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Dual N-ch MOSFET package
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2.5A RDSON@VGS=6V, ID=2.0A 100V 2.8A 5.0A 74mΩ(typ)
MTE080A10Q8 Datasheet (402.32 KB)
MTE080A10Q8
Cystech Electonics
402.32 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTE.
📁 Related Datasheet
MTE080N15KJ3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RE3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RFP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RH8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RJ3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE013N08E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE013N08H8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
