CYStech Electronics Corp.
Spec. No. : C912J3
Issued Date : 2015.06.17
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Drain-Source Voltage (Note 1)
Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Single Pulse Avalanche Energy @ L=0.1mH, ID=45A, VDD=25V
Repetitive Avalanche Energy
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Thermal Resistance, Junction-to-ambient, max (Note 4)
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
CYStek Product Specification