MTE09N06J3 - N-Channel Enhancement Mode Power MOSFET
Cystech Electonics
Key Features
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free package
Symbol
MTE09N06J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTE09N06J3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compou.
Full PDF Text Transcription for MTE09N06J3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTE09N06J3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Spec. No. : C912J3 Issued Date : 2015.06.17 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE09N06J3 BVDSS ID@VGS=10V, ...
MTE09N06J3 Datasheet
