MTE2D4N06E3 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C933E3 Issued Date : 2013.03.20 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE2D4N06E3 BVDSS ID @VGS=10V RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 60V 120A 2.6mΩ 2.

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Datasheet Details

Part number	MTE2D4N06E3
Manufacturer	Cystech Electonics
File Size	309.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Download	MTE2D4N06E3 Download (PDF)

Key Features

Simple Drive Requirement.
Fast Switching Characteristic.
RoHS compliant package Symbol MTE2D4N06E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package MTE2D4N06E3-0-UB-S TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zer.

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