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MTE50N10BFP - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=7V, ID=10A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) Symbol MTE50N10BFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE50N10BFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / car.

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Datasheet Details

Part number MTE50N10BFP
Manufacturer Cystech Electonics
File Size 390.51 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE50N10BFP Datasheet

Full PDF Text Transcription for MTE50N10BFP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTE50N10BFP. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE50N10BFP BVDSS ID@VGS=10V,...

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N-Channel Enhancement Mode Power MOSFET MTE50N10BFP BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=15A Features RDS(ON)@VGS=7V, ID=10A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.

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