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Cystech Electonics

MTE50N10BFP Datasheet Preview

MTE50N10BFP Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C141FP
Issued Date : 2015.08.18
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE50N10BFP BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=15A
Features
RDS(ON)@VGS=7V, ID=10A
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
100V
24A
26.6 mΩ(typ)
34.2 mΩ(typ)
Symbol
MTE50N10BFP
Outline
TO-220FP
GGate
DDrain
SSource
GDS
Ordering Information
Device
MTE50N10BFP-0-UB-S
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE50N10BFP
CYStek Product Specification




Cystech Electonics

MTE50N10BFP Datasheet Preview

MTE50N10BFP Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C141FP
Issued Date : 2015.08.18
Revised Date :
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.14mH, ID=24 Amps,
VDD=50V
(Note 2)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Note 2)
TA=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
TL
Limits
100
±20
24*
17*
5.5
4.4
96*
24
40
4.2
42
21
2.1
1.4
300
TPKG
260
Tj, Tstg -55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
3.5
58
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
MTE50N10BFP
CYStek Product Specification


Part Number MTE50N10BFP
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 8 Pages
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