MTE50N10BFP - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE50N10BFP
Manufacturer	Cystech Electonics
File Size	390.51 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE50N10BFP-CystechElectonics.pdf

RDS(ON)@VGS=7V, ID=10A.
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Insulating package, front/back side insulating voltage=2500V(AC).
RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) Symbol MTE50N10BFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE50N10BFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / car.

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Published: Aug 30, 2016 |