• Part: MTE50N10QE3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 346.61 KB
Download MTE50N10QE3 Datasheet PDF
Cystech Electonics
MTE50N10QE3
MTE50N10QE3 is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) Symbol Outline TO-220 G:Gate D:Drain S:Source Ordering Information Device MTE50N10QE3-0-UB-X Package TO-220 (Ro HS pliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche...