MTE50N10QE3
MTE50N10QE3 is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Ro HS pliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=15A
100V 29A
5.5A 26.4 mΩ(typ)
Symbol
Outline
TO-220
G:Gate D:Drain S:Source
Ordering Information
Device MTE50N10QE3-0-UB-X
Package
TO-220 (Ro HS pliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche...