• Part: MTE50N10BFP
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 390.51 KB
Download MTE50N10BFP Datasheet PDF
Cystech Electonics
MTE50N10BFP
MTE50N10BFP is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features RDS(ON)@VGS=7V, ID=10A - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Insulating package, front/back side insulating voltage=2500V(AC) - Ro HS pliant package 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) Symbol Outline TO-220FP G:Gate D:Drain S:Source Ordering Information Device MTE50N10BFP-0-UB-S Package TO-220FP (Ro HS pliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note...