MTE50N10BFP Description
CYStech Electronics Corp. 2015.08.18 Revised Date : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE50N10BFP BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=15A.
MTE50N10BFP Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Insulating package, front/back side insulating voltage=2500V(AC)
- RoHS pliant package