Datasheet4U Logo Datasheet4U.com

MTE50N10BFP - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=7V, ID=10A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) Symbol MTE50N10BFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE50N10BFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / car.

📥 Download Datasheet

Datasheet Details

Part number MTE50N10BFP
Manufacturer Cystech Electonics
File Size 390.51 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE50N10BFP Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTE50N45 (MTE50N45 - MTE60N40) POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS Motorola
MTE50N50 (MTE50N45 - MTE60N40) POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS Motorola
MTE5066-UR Metal Can Red Emitter Marktech Corporate
MTE53N50E TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM Motorola
MTE030N15RH8 N-Channel Enhancement Mode Power MOSFET CYStech Electronics

Other Datasheets by Cystech Electonics

Part Number Description
MTE50N10FP N-Channel Enhancement Mode Power MOSFET
MTE50N10QE3 N-Channel Enhancement Mode Power MOSFET
MTE55N20J3 N-Channel Enhancement Mode Power MOSFET
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE50N10BFP BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=15A Features RDS(ON)@VGS=7V, ID=10A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.