• Part: MTE50N10FP
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 247.76 KB
Download MTE50N10FP Datasheet PDF
Cystech Electonics
MTE50N10FP
MTE50N10FP is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Description The MTE50N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all mercial-industrial applications Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Insulating package, front/back side insulating voltage=2500V(AC) - Ro HS pliant package Symbol Outline TO-220FP G:Gate D:Drain S:Source CYStek Product Specification CYStech Electronics Corp. Spec. No. : C893FP Issued Date : 2013.05.27 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.14m H, ID=23 Amps, VDD=50V (Note 2) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) Power...