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MTE50N10FP - N-Channel Enhancement Mode Power MOSFET

General Description

The MTE50N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package Symbol MTE50N10FP Outline TO-220FP G：Gate D：Drain S：Source MTE50N10FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C893FP Issued Date : 2013.05.27 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drai.

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Datasheet Details

Part number MTE50N10FP
Manufacturer Cystech Electonics
File Size 247.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE50N10FP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C893FP Issued Date : 2013.05.27 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE50N10FP BVDSS ID RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=6V, ID=10A 100V 23A 32 mΩ(typ) 35 mΩ(typ) Description The MTE50N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.