MTE50N10FP Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Insulating package, front/back side insulating voltage=2500V(AC)
- RoHS pliant package
- Part: MTE50N10FP
- Manufacturer: Cystech Electonics
- Size: 247.76 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| MTE50N10BFP | N-Channel Enhancement Mode Power MOSFET |
| MTE50N10QE3 | N-Channel Enhancement Mode Power MOSFET |
| MTE55N20J3 | N-Channel Enhancement Mode Power MOSFET |
| MTE010N10E3 | N-Channel Enhancement Mode Power MOSFET |
| MTE010N10F3 | N-Channel Enhancement Mode Power MOSFET |
MTE50N10FP Description
The MTE50N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all mercial-industrial applications.