* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) Symbol MTE50N10QE3 Outline TO-220 G：
MTE50N10QE3 Datasheet (346.61 KB)
MTE50N10QE3
Cystech Electonics
346.61 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE50N10QE3 Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 1.
📁 Related Datasheet
MTE50N10BFP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE50N10FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE50N45 (MTE50N45 - MTE60N40) POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS (Motorola)
MTE50N50 (MTE50N45 - MTE60N40) POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS (Motorola)
MTE5066-UR Metal Can Red Emitter (Marktech Corporate)
MTE53N50E TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM (Motorola)
MTE55N20J3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
