MTE50N10QE3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE50N10QE3
Manufacturer	Cystech Electonics
File Size	346.61 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE50N10QE3-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) Symbol MTE50N10QE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE50N10QE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for Ro.

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Published: Aug 30, 2016 |