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Cystech Electonics

MTEA0N10Q8 Datasheet Preview

MTEA0N10Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTEA0N10Q8 BVDSS
ID
RDSON@VGS=10V, ID=4A
RDSON@VGS=5.5V, ID=3A
100V
5.6A
76mΩ(typ)
90mΩ(typ)
Features
Single Drive Requirement
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
Symbol
MTEA0N10Q8
Outline
Pin 1
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTEA0N10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEA0N10Q8
CYStek Product Specification




Cystech Electonics

MTEA0N10Q8 Datasheet Preview

MTEA0N10Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C (Note 1)
Continuous Drain Current @VGS=10V,TC=100°C (Note 1)
Continuous Drain Current @VGS=10V,TA=25°C (Note 2)
Continuous Drain Current @VGS=10V,TA=100°C (Note 2)
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=5.6A, RG=25Ω (Note 2)
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=100
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
100
±20
5.6
4.0
4.0
2.8
30
2
15.6
0.6
6
3
3
1.5
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Rth,j-c
Rth,j-a
25
50
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
100
2.0
-
-
-
-
-
-
- - V VGS=0V, ID=250μA
3.0 3.5
V VDS = VGS, ID=250μA
7 - S VDS =5V, ID=4A
-
±100
nA VGS=±20V
-
-
1
25
μA
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
76 100 mΩ VGS =10V, ID=4A
90 130 mΩ VGS =5.5V, ID=3A
MTEA0N10Q8
CYStek Product Specification


Part Number MTEA0N10Q8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
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