MTEA0N10Q8 - N-Channel Enhancement Mode Power MOSFET
Cystech Electonics
Key Features
Single Drive Requirement.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free lead plating and halogen-free package
Symbol
MTEA0N10Q8
Outline
Pin 1
SOP-8
G：Gate D：Drain S：Source
Ordering Information
Device MTEA0N10Q8-0-T3-G
Package
SOP-8 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec,.
Full PDF Text Transcription for MTEA0N10Q8 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTEA0N10Q8. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA0N10Q8 BVDSS ID RDSON@VGS=...
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N-Channel Enhancement Mode Power MOSFET MTEA0N10Q8 BVDSS ID RDSON@VGS=10V, ID=4A RDSON@VGS=5.5V, ID=3A 100V 5.
MTEA0N10Q8 Datasheet
