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MTEA2N15L3 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Single Drive Requirement.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package Symbol MTEA2N15L3 Outline SOT-223 D G:Gate D:Drain S:Source S D G Ordering Information Device MTEA2N15L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packi.

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Datasheet Details

Part number MTEA2N15L3
Manufacturer Cystech Electonics
File Size 257.39 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEA2N15L3 Datasheet

Full PDF Text Transcription for MTEA2N15L3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTEA2N15L3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C880L3 Issued Date : 2012.10.03 Revised Date : 2013.10.25 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA2N15L3 BVDSS ID...

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No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA2N15L3 BVDSS ID RDSON@VGS=10V, ID=1.6A RDSON@VGS=5.5V, ID=1A Description 150V 3A 125mΩ(typ) 141mΩ(typ) The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.