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Cystech Electonics

MTEA2N15L3 Datasheet Preview

MTEA2N15L3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C880L3
Issued Date : 2012.10.03
Revised Date : 2013.10.25
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTEA2N15L3 BVDSS
ID
RDSON@VGS=10V, ID=1.6A
RDSON@VGS=5.5V, ID=1A
Description
150V
3A
125mΩ(typ)
141mΩ(typ)
The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.
Features
Single Drive Requirement
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
Symbol
MTEA2N15L3
Outline
SOT-223
D
GGate DDrain SSource
S
D
G
Ordering Information
Device
MTEA2N15L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEA2N15L3
CYStek Product Specification




Cystech Electonics

MTEA2N15L3 Datasheet Preview

MTEA2N15L3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C880L3
Issued Date : 2012.10.03
Revised Date : 2013.10.25
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V,TC=100°C
Continuous Drain Current @VGS=10V,TA=25°C
Continuous Drain Current @VGS=10V,TA=70°C
Pulsed Drain Current
TC=25
Total Power Dissipation
TC=100
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
150
±20
5.2
3.3
3
2.4
16 *1
8.3
3.3
2.8
1.1
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
15 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
45 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 120°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
150
2.0
-
-
-
-
-
-
-
-
-
- - V VGS=0, ID=250μA
3.3 4.0
V VDS = VGS, ID=250μA
4.5 -
S VDS =10V, ID=1.6A
-
±100
nA VGS=±20
-
-
1
25
μA
VDS =120V, VGS =0
VDS =120V, VGS =0, Tj=125°C
125 160 mΩ VGS =10V, ID=1.6A
141 180 mΩ VGS =5.5V, ID=1A
536 -
57 -
21 -
pF VGS=0V, VDS=25V, f=1MHz
MTEA2N15L3
CYStek Product Specification


Part Number MTEA2N15L3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
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