900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cystech Electonics

MTEA2N15Q8 Datasheet Preview

MTEA2N15Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C880Q8
Issued Date : 2012.10.01
Revised Date : 2013.03.01
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTEA2N15Q8 BVDSS
ID
RDSON@VGS=10V, ID=3.9A
RDSON@VGS=5.5V, ID=3.3A
150V
4A
122mΩ(typ)
140mΩ(typ)
Description
The MTEA2N15Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
Single Drive Requirement
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free lead plating package
Symbol
MTEA2N15Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTEA2N15Q8
CYStek Product Specification




Cystech Electonics

MTEA2N15Q8 Datasheet Preview

MTEA2N15Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C880Q8
Issued Date : 2012.10.01
Revised Date : 2013.03.01
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V,TC=100°C
Continuous Drain Current @VGS=10V,TA=25°C
Continuous Drain Current @VGS=10V,TA=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=2A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
150
±20
4
2.5
3.2
2
16 *1
2
0.2
0.05 *2
5
2
3.1
1.2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
150
2.0
-
-
-
-
-
-
-
-
-
- - V VGS=0, ID=250μA
3.3 4.0
V VDS = VGS, ID=250μA
5.4 -
S VDS =15V, ID=3.9A
-
±100
nA VGS=±20
-
-
1
25
μA
VDS =120V, VGS =0
VDS =120V, VGS =0, Tj=125°C
122 160 mΩ VGS =10V, ID=3.9A
140 180 mΩ VGS =5.5V, ID=3.3A
553 -
58 -
22 -
pF VGS=0V, VDS=25V, f=1MHz
MTEA2N15Q8
CYStek Product Specification


Part Number MTEA2N15Q8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
PDF Download

MTEA2N15Q8 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 MTEA2N15Q8 N-Channel Enhancement Mode Power MOSFET
Cystech Electonics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy