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Cystech Electonics
Cystech Electonics

MTEA5N10J3 Datasheet Preview

MTEA5N10J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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MTEA5N10J3 pdf
CYStech Electronics Corp.
Spec. No. : C869J3
Issued Date : 2016.07.29
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTEA5N10J3 BVDSS
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=10A
100V
9.9A
151mΩ(TYP)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTEA5N10J3
Outline
TO-252(DPAK)
GGate DDrain
SSource
G DS
Ordering Information
Device
MTEA5N10J3-0-T3-G
Package
TO-252
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEA5N10J3
CYStek Product Specification



Cystech Electonics
Cystech Electonics

MTEA5N10J3 Datasheet Preview

MTEA5N10J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

MTEA5N10J3 pdf
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.15mH, ID=10A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
*3. 100% tested by L=0.1mH, IAS=5A, VGS=10V, VDD=50V
Symbol
VDS
VGS
ID
*1 IDM
IAS
*3 EAS
*2 EAR
Pd
Tj, Tstg
Spec. No. : C869J3
Issued Date : 2016.07.29
Revised Date :
Page No. : 2/9
Limits
100
±20
9.9
6.3
20
10
7.2
3.6
35
14
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC 3.6
Thermal Resistance, Junction-to-ambient, max
RθJA
50 (Note)
110
°C/W
Note : When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given
application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
-
±100
nA VGS=±20, VDS=0V
-
-
1
25
μA
VDS =100V, VGS =0V
VDS =80V, VGS =0V, TJ=125°C
151 185 mΩ VGS =10V, ID=10A
4.2 - S VDS =10V, ID=5A
5.4 -
1.6 - nC ID=10A, VDS=80V, VGS=10V
1.9 -
6-
17
11.4
-
-
ns VDS=50V, ID=1A, VGS=10V, RG=6Ω
6.2 -
MTEA5N10J3
CYStek Product Specification


Part Number MTEA5N10J3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
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