MTED6N25H8 - N-Channel Enhancement Mode Power MOSFET
Cystech Electonics
Key Features
Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free lead plating and Halogen-free package
Symbol
MTED6N25H8
G：Gate D：Drain S：Source
Outline
Pin 1
S S S G
DFN5×6
D D D D
G S
S
S
D D D D
Pin 1
Ordering Information
Device MTED6N25H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant.
Full PDF Text Transcription for MTED6N25H8 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTED6N25H8. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Spec. No. : C894H8 Issued Date : 2016.07.26 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTED6N25H8 BVDSS ID @VGS=10V,...
View more extracted text
N-Channel Enhancement Mode Power MOSFET MTED6N25H8 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=5A 250V 4.6A 1.
MTED6N25H8 Datasheet
